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Verdens mindste GaN powertransistor

Verdens mindste GaN powertransistor

GaN Systems er klar med 650V, 15A GaN transistor med et footprint, der er halvt så stort som GaN transistorer, der blev introduceret som 'verdens mindste' i forbindelse med PCIM udstillingen for kort tid siden (in english).

GaN Systems, a leading developer of gallium nitride power switching semiconductors, has announced  the world’s smallest 650V, 15A gallium nitride transistor. With a footprint of just 5.0 x 6.5mm, the GS66504B – one of a family of 650V devices that spans 7A to 200A – is 50% smaller than competing devices.

- We were somewhat surprised to see announcements at last week’s PCIM power electronics exhibition and conference that trumpeted gallium nitride 600V, 15A devices in 8x8mm dual-flat no-lead (DFN) packaging as the ‘industry’s smallest’ enhancement mode devices - our part is clearly much smaller. But I suppose this is just an indication of how quickly the GaN market is moving, and a positive indication that silicon has reached its limits, says Jim Witham, CEO GaN Systems, and he adds:

- Our message to designers in applications as diverse as flat screen TVs, games consoles, washing machines, inverters, electric vehicles, motors and wider is the same: if you are not on-board with GaN, you will be left behind by your competitors.

GaN Systems is the first company to have developed and brought a comprehensive product range of devices with current ratings from 7A to 250A to the global market – its Island Technology die design, combined with its extremely low inductance and thermally efficient GaNPX packaging and Drive Assist technology means the company’s GaN transistors offer a 40-fold improvement in switching and conduction performance over traditional silicon MOSFETs and IGBTs. Devices are available now through its worldwide distribution network.
28/5 2015